Natural bandgaps produce 1.25V reference voltage that does not operate in low-voltage applications. This paper presents a current-mode bandgap reference circuit operating down to 1V supply (nominal = 1.2V) with low temperature coefficient, low power consumption, high Power-Supply-Rejection (PSR) and high performance robustness for industrial production in the consumer microphones field. The voltage reference is generated by the sum of two currents over a matched resistor: one current is proportional to VEB, the other one is proportional to VT. In 65nm node, a 600mV bandgap (BG) reference voltage consumes 5.2uW (4.3uA) at 1.2V supply. The simulated PSR is -91dB, -43dB and -29dB at DC, 1kHz and 10kHz respectively. Montecarlo simulations show a variation of 1% at 3sigma after 4-bits trimming over a temperature range between -40 degC and 100 degC without any high-order curvature compensation, performing 5ppm/degC temperature coefficient.

Barteselli, E., Sant, L., Gaggl, R., Baschirotto, A. (2021). A First Order-Curvature Compensation 5ppm/°C Low-Voltage & High PSR 65nm-CMOS Bandgap Reference with one-point 4-bits Trimming Resistor. In SMACD / PRIME 2021; International Conference on SMACD and 16th Conference on PRIME (pp.416-419). VDE VERLAG GMBH.

A First Order-Curvature Compensation 5ppm/°C Low-Voltage & High PSR 65nm-CMOS Bandgap Reference with one-point 4-bits Trimming Resistor

Barteselli, E
;
Sant, L;Baschirotto, A
2021

Abstract

Natural bandgaps produce 1.25V reference voltage that does not operate in low-voltage applications. This paper presents a current-mode bandgap reference circuit operating down to 1V supply (nominal = 1.2V) with low temperature coefficient, low power consumption, high Power-Supply-Rejection (PSR) and high performance robustness for industrial production in the consumer microphones field. The voltage reference is generated by the sum of two currents over a matched resistor: one current is proportional to VEB, the other one is proportional to VT. In 65nm node, a 600mV bandgap (BG) reference voltage consumes 5.2uW (4.3uA) at 1.2V supply. The simulated PSR is -91dB, -43dB and -29dB at DC, 1kHz and 10kHz respectively. Montecarlo simulations show a variation of 1% at 3sigma after 4-bits trimming over a temperature range between -40 degC and 100 degC without any high-order curvature compensation, performing 5ppm/degC temperature coefficient.
slide + paper
65nm CMOS; Bandgap; Current-mode; Low-current; Low-voltage; Trimming; Voltage reference;
English
2021 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2021 and 16th Conference on PhD Research in Microelectronics and Electronics, PRIME 2021 - Virtual, Online19 July 2021 through 22 July 2021
2021
SMACD / PRIME 2021; International Conference on SMACD and 16th Conference on PRIME
978-380075589-9
4-ott-2021
2021
416
419
reserved
Barteselli, E., Sant, L., Gaggl, R., Baschirotto, A. (2021). A First Order-Curvature Compensation 5ppm/°C Low-Voltage & High PSR 65nm-CMOS Bandgap Reference with one-point 4-bits Trimming Resistor. In SMACD / PRIME 2021; International Conference on SMACD and 16th Conference on PRIME (pp.416-419). VDE VERLAG GMBH.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/329617
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