We have proposed, based on ab initio calculations, that the ground state (001) surface of alpha-Ga should be covered by two layers of Ga III, a denser fully metallic phase which is stable in the bulk only at high pressure and temperature. We present here the details of the surface energy balance, and discuss the reasons for expecting this kind of solid-state wetting. Surface metallization, in particular, is shown to be connected with a lowering of the various surface energy terms. The associated electron transfer from the GaIII film to alpha-Ga is predicted to give an interface dipole which lowers the work function of this face.
Bernasconi, M., Chiarotti, G., Tosatti, E. (1994). SOLID-STATE SELF-WETTING PHENOMENA AT THE (001) SURFACE OF SEMIMETALLIC ALPHA-GA. Intervento presentato a: 13th European Conference on Surface Science (ECOSS-13), WARWICK, ENGLAND [10.1016/0039-6028(94)91519-9].
SOLID-STATE SELF-WETTING PHENOMENA AT THE (001) SURFACE OF SEMIMETALLIC ALPHA-GA
BERNASCONI, MARCO;
1994
Abstract
We have proposed, based on ab initio calculations, that the ground state (001) surface of alpha-Ga should be covered by two layers of Ga III, a denser fully metallic phase which is stable in the bulk only at high pressure and temperature. We present here the details of the surface energy balance, and discuss the reasons for expecting this kind of solid-state wetting. Surface metallization, in particular, is shown to be connected with a lowering of the various surface energy terms. The associated electron transfer from the GaIII film to alpha-Ga is predicted to give an interface dipole which lowers the work function of this face.
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