A system of ion implanted impurities in a semiconductor is described by a Monte Carlo simulation of a non-equilibrium system of random distributed hard spheres. The radial distribution function of this system is found. The comparison is made with the fluid hard sphere case. The assumption that the absence either of annealing or diffusion of the impurities after the implantation process is also made. © 1983.
Roman, E., Majlis, N. (1983). Computer simulation model of the structure of ion implanted impurities in semiconductors. SOLID STATE COMMUNICATIONS, 47(4), 259-261 [10.1016/0038-1098(83)90557-4].
Computer simulation model of the structure of ion implanted impurities in semiconductors
Roman E.;
1983
Abstract
A system of ion implanted impurities in a semiconductor is described by a Monte Carlo simulation of a non-equilibrium system of random distributed hard spheres. The radial distribution function of this system is found. The comparison is made with the fluid hard sphere case. The assumption that the absence either of annealing or diffusion of the impurities after the implantation process is also made. © 1983.
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