We present the calculation of the Raman spectra in backscattering configuration for Al(x)Ga(1-x)As (001) superlattices and modulated alloys, based on the bond-charge-model dynamics, the average t-matrix approximation for compositional disorder and the bond polarizability model for the Raman tensor. The features of Raman spectra are shown to reflect the Al concentration profile along the growth axis, hence providing a valuable tool for compositional characterization of superlattices.

Miglio, L., Molteni, C., Bernasconi, M. (1991). ASSESSMENT OF COMPOSITIONAL DISORDER IN ALXGA1-XAS SUPERLATTICES FROM THE ANALYSIS OF RAMAN-SPECTRA. APPLIED PHYSICS LETTERS, 59(7), 788-790 [10.1063/1.105343].

ASSESSMENT OF COMPOSITIONAL DISORDER IN ALXGA1-XAS SUPERLATTICES FROM THE ANALYSIS OF RAMAN-SPECTRA

MIGLIO, LEONIDA;BERNASCONI, MARCO
1991

Abstract

We present the calculation of the Raman spectra in backscattering configuration for Al(x)Ga(1-x)As (001) superlattices and modulated alloys, based on the bond-charge-model dynamics, the average t-matrix approximation for compositional disorder and the bond polarizability model for the Raman tensor. The features of Raman spectra are shown to reflect the Al concentration profile along the growth axis, hence providing a valuable tool for compositional characterization of superlattices.
Articolo in rivista - Articolo scientifico
lattice dynamics, semiconductor superlattices
English
1991
59
7
788
790
none
Miglio, L., Molteni, C., Bernasconi, M. (1991). ASSESSMENT OF COMPOSITIONAL DISORDER IN ALXGA1-XAS SUPERLATTICES FROM THE ANALYSIS OF RAMAN-SPECTRA. APPLIED PHYSICS LETTERS, 59(7), 788-790 [10.1063/1.105343].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/32676
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