The AC conductivity of a percolation model with local energetical disorder for porous Silicon in three dimensions, σ(ω), is studied by Monte Carlo simulations. The model includes both diffusion and recombination processes and σ(ω) is obtained by a Fourier transform of the mean-square displacement of the carriers, where hopping diffusion of a single type of carrier (either an electron or an exciton) and two types of carriers (an electron and a hole) are considered. It is found that at low temperatures, the behavior of σ(ω) depends sensitively on the type of carrier considered.
Ventura, P., Costa, L., Carmo, M., Roman, H., Pavesi, L. (2000). AC conductivity of porous silicon from Monte Carlo simulations. JOURNAL OF POROUS MATERIALS, 7(1), 107-110 [10.1023/a:1009678502689].
AC conductivity of porous silicon from Monte Carlo simulations
Roman H. E.;Pavesi L.
2000
Abstract
The AC conductivity of a percolation model with local energetical disorder for porous Silicon in three dimensions, σ(ω), is studied by Monte Carlo simulations. The model includes both diffusion and recombination processes and σ(ω) is obtained by a Fourier transform of the mean-square displacement of the carriers, where hopping diffusion of a single type of carrier (either an electron or an exciton) and two types of carriers (an electron and a hole) are considered. It is found that at low temperatures, the behavior of σ(ω) depends sensitively on the type of carrier considered.
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