Electron spin resonance (EPR) was used to identify the paramagnetic defects in semiconductor oxides. Zn+ centers and ionized oxygen vacancies (V0+) were detected on ZnO and the variation in their amounts was associated with redox chemisorption processes on the oxide surface. The variation depended on the temperature and the surrounding atmosphere [air, 0.5 % H-2/air].
Morazzoni, F., Scotti, R. (1991). ANALYSIS OF PARAMAGNETIC DEFECTS IN SEMICONDUCTOR OXIDES - A NEW APPLICATION OF ELECTRON-SPIN-RESONANCE. ANALUSIS, 19(7), 218-220.
ANALYSIS OF PARAMAGNETIC DEFECTS IN SEMICONDUCTOR OXIDES - A NEW APPLICATION OF ELECTRON-SPIN-RESONANCE
MORAZZONI, FRANCA;SCOTTI, ROBERTO
1991
Abstract
Electron spin resonance (EPR) was used to identify the paramagnetic defects in semiconductor oxides. Zn+ centers and ionized oxygen vacancies (V0+) were detected on ZnO and the variation in their amounts was associated with redox chemisorption processes on the oxide surface. The variation depended on the temperature and the surrounding atmosphere [air, 0.5 % H-2/air].
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