A wavelength resolved thermally stimulated luminescence (TSL) study has been carried out for the first time on X-irradiated chemical vapor deposition SiO2 films deposited on a silicon substrate, from room temperature, to 400 degrees C. Upon irradiation, the TSL glow curve features a prominent structure at a maximum temperature, T-max, of approximately 62 degrees C (heating rate = 1 degrees C/s); the analysis of the emission wavelength shows a peak at 457 nm (2.71 eV). The shape of the TSL peak is complex, and cannot be described in the frame of classical first- or second-order kinetics. Moreover, T-max has a strong and monotonic shift to higher temperatures after partial pre-heating treatments while the spectral emission is not modified: a similar phenomenon has already been observed in bulk fused silica of various types, different from crystalline quartz which does not present any shift of T-max as a function of pre-heating. These results suggest that the TSL peak is characterized by a distribution of trap parameters: specifically, a continuous distribution of trap energy or of the frequency factor can be taken into account. Considerations on the characteristics of the trap parameter distribution are made.

Martini, M., Meinardi, F., Rosetta, E., Spinolo, G., Vedda, A. (1995). WAVELENGTH RESOLVED THERMALLY STIMULATED LUMINESCENCE OF SIO2-FILMS. JOURNAL OF NON-CRYSTALLINE SOLIDS, 187, 124-128 [10.1016/0022-3093(95)00211-1].

WAVELENGTH RESOLVED THERMALLY STIMULATED LUMINESCENCE OF SIO2-FILMS

MARTINI, MARCO;MEINARDI, FRANCESCO;ROSETTA, EMANUELA;SPINOLO, GIORGIO MARIO;VEDDA, ANNA GRAZIELLA
1995

Abstract

A wavelength resolved thermally stimulated luminescence (TSL) study has been carried out for the first time on X-irradiated chemical vapor deposition SiO2 films deposited on a silicon substrate, from room temperature, to 400 degrees C. Upon irradiation, the TSL glow curve features a prominent structure at a maximum temperature, T-max, of approximately 62 degrees C (heating rate = 1 degrees C/s); the analysis of the emission wavelength shows a peak at 457 nm (2.71 eV). The shape of the TSL peak is complex, and cannot be described in the frame of classical first- or second-order kinetics. Moreover, T-max has a strong and monotonic shift to higher temperatures after partial pre-heating treatments while the spectral emission is not modified: a similar phenomenon has already been observed in bulk fused silica of various types, different from crystalline quartz which does not present any shift of T-max as a function of pre-heating. These results suggest that the TSL peak is characterized by a distribution of trap parameters: specifically, a continuous distribution of trap energy or of the frequency factor can be taken into account. Considerations on the characteristics of the trap parameter distribution are made.
Articolo in rivista - Articolo scientifico
thin films; silics; thermoluminescence
English
124
128
5
Martini, M., Meinardi, F., Rosetta, E., Spinolo, G., Vedda, A. (1995). WAVELENGTH RESOLVED THERMALLY STIMULATED LUMINESCENCE OF SIO2-FILMS. JOURNAL OF NON-CRYSTALLINE SOLIDS, 187, 124-128 [10.1016/0022-3093(95)00211-1].
Martini, M; Meinardi, F; Rosetta, E; Spinolo, G; Vedda, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/32153
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