The effects of different post-formation thermal annealings on the phase transition in TiSi2 patterned films were ivestigated. Results show that, whatever the thermal budget, a large number of small area structures remain in the highly resistive C49 phase. Data analysis shows that the C54 nucleation site density is unaffected by an increase of the annealing temperature.
Quilici, S., Meinardi, F., Sabbadini, A. (1998). Micro-Raman analysis of the effects of post-silicidation thermal treatments on C54 TiSi2 formation in confined areas. SOLID STATE COMMUNICATIONS, 109(3), 141-143 [10.1016/S0038-1098(98)00537-7].
Micro-Raman analysis of the effects of post-silicidation thermal treatments on C54 TiSi2 formation in confined areas
Meinardi, F;
1998
Abstract
The effects of different post-formation thermal annealings on the phase transition in TiSi2 patterned films were ivestigated. Results show that, whatever the thermal budget, a large number of small area structures remain in the highly resistive C49 phase. Data analysis shows that the C54 nucleation site density is unaffected by an increase of the annealing temperature.
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