An electrostatic discharge (ESD)-protected one-time-programmable (OTP) memory front-end circuit, for high-voltage (HV) applications, designed and manufactured in silicon-on-insulator (SOI) technology, is presented. The SOI technology meets HV functional-isolation and level-shifting requirements but is not suitable for advanced analog circuits. The presented OTP memory is discussed as an introduction to digital programmability in the considered technology. The memory element consists of an antifuse type structure and is implemented using a 5-V nMOS with L=1µm and W=1.2µm. The cell memory allows for significant area and power savings in the adopted HV technology. Conditions for this require that an efficient ESD protection will guarantee safe operation, even in the presence of a small and fragile on-chip element whose undesired burning would compromise the programming mechanism, and consequently the reliability, of the circuit. Details about the circuit design implementation of the front-end circuit for both read and write circuits and ESD protection are described with experimental results validating the proposed implementation.

Arosio, M., Boffino, C., Morini, S., Priefert, D., Albayrak, O., Boguszewicz, V., et al. (2021). An ESD-Protected, One-Time Programmable Memory Front-End Circuit for High-Voltage, Silicon-on-Insulator Technology. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(6 (June 2021)), 2848-2854 [10.1109/TED.2021.3074118].

An ESD-Protected, One-Time Programmable Memory Front-End Circuit for High-Voltage, Silicon-on-Insulator Technology

Arosio M.
;
Baschirotto A.
2021

Abstract

An electrostatic discharge (ESD)-protected one-time-programmable (OTP) memory front-end circuit, for high-voltage (HV) applications, designed and manufactured in silicon-on-insulator (SOI) technology, is presented. The SOI technology meets HV functional-isolation and level-shifting requirements but is not suitable for advanced analog circuits. The presented OTP memory is discussed as an introduction to digital programmability in the considered technology. The memory element consists of an antifuse type structure and is implemented using a 5-V nMOS with L=1µm and W=1.2µm. The cell memory allows for significant area and power savings in the adopted HV technology. Conditions for this require that an efficient ESD protection will guarantee safe operation, even in the presence of a small and fragile on-chip element whose undesired burning would compromise the programming mechanism, and consequently the reliability, of the circuit. Details about the circuit design implementation of the front-end circuit for both read and write circuits and ESD protection are described with experimental results validating the proposed implementation.
Articolo in rivista - Articolo scientifico
Antifuse; digital programmability; electrostatic discharge (ESD) protection; high voltage (HV); one-time-programmable (OTP) memory; silicon-on-insulator (SOI);
English
5-mag-2021
2021
68
6 (June 2021)
2848
2854
9423871
none
Arosio, M., Boffino, C., Morini, S., Priefert, D., Albayrak, O., Boguszewicz, V., et al. (2021). An ESD-Protected, One-Time Programmable Memory Front-End Circuit for High-Voltage, Silicon-on-Insulator Technology. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(6 (June 2021)), 2848-2854 [10.1109/TED.2021.3074118].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/317481
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