We report photoluminescence (PL) data on amorphous (Formula presented) in the spectral range of the α (4.3 eV), β (3.1 eV), and γ (2.7 eV) emissions excited with synchrotron radiation. Differently prepared and treated samples are compared. Neutron irradiation gives rise to PL features distinct from those observed both in unirradiated Ge-doped silica and in samples with other impurities. Our data suggest that the defect-formation processes determine the different PL patterns observed in (Formula presented) while the usually proposed distinction between Si- and Ge-like centers is not relevant. © 1998 The American Physical Society.
Meinardi, F., Paleari, A. (1998). Native and radiation-induced photoluminescent defects in SiO2: Role of impurities. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 58(7), 3511-3514 [10.1103/PhysRevB.58.3511].
Native and radiation-induced photoluminescent defects in SiO2: Role of impurities
MEINARDI, FRANCESCO;PALEARI, ALBERTO MARIA FELICE
1998
Abstract
We report photoluminescence (PL) data on amorphous (Formula presented) in the spectral range of the α (4.3 eV), β (3.1 eV), and γ (2.7 eV) emissions excited with synchrotron radiation. Differently prepared and treated samples are compared. Neutron irradiation gives rise to PL features distinct from those observed both in unirradiated Ge-doped silica and in samples with other impurities. Our data suggest that the defect-formation processes determine the different PL patterns observed in (Formula presented) while the usually proposed distinction between Si- and Ge-like centers is not relevant. © 1998 The American Physical Society.
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