A CMOS interface for a piston-type MEMS capacitive microphone is presented. It performs a capacitance-to-voltage conversion by bootstrapping the sensor through a voltage pre-amplifier, feeding a third-order sigma-delta modulator. The bootstrapping performs active parasitic compensation, improving the readout sensitivity by -12dB. The total current consumption is 460uA at 1.8V-supply. The digital output achieves 80dBA-DR, with 63dBA peak-SNR, using 0.35um 2P/4M CMOS technology. The paper includes electrical and acoustic measurement results for the interface. © 2008 IEEE.
Jawed, S., Cattin, D., Gottardi, M., Massari, N., Baschirotto, A., Simoni, A. (2008). A 828 µW 1.8V 80dB dynamic-range readout interface for a MEMS capacitive microphone. In Solid-State Circuits Conference, 2008. ESSCIRC 2008 (pp.442-445). 345 E 47TH ST, NEW YORK, NY 10017 USA : IEEE [10.1109/ESSCIRC.2008.4681887].
A 828 µW 1.8V 80dB dynamic-range readout interface for a MEMS capacitive microphone
BASCHIROTTO, ANDREA;
2008
Abstract
A CMOS interface for a piston-type MEMS capacitive microphone is presented. It performs a capacitance-to-voltage conversion by bootstrapping the sensor through a voltage pre-amplifier, feeding a third-order sigma-delta modulator. The bootstrapping performs active parasitic compensation, improving the readout sensitivity by -12dB. The total current consumption is 460uA at 1.8V-supply. The digital output achieves 80dBA-DR, with 63dBA peak-SNR, using 0.35um 2P/4M CMOS technology. The paper includes electrical and acoustic measurement results for the interface. © 2008 IEEE.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
