The High Luminosity upgrade of the CERN LHC collider (HL-LHC) demands for a new, high-radiation tolerant solid-state pixel sensor capable of surviving fluencies up to a few 1016 neq/cm2 at ∼3cm from the interaction point. To this extent the INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler (FBK), is aiming at the development of thin n-in-p type pixel sensors for the HL-LHC. The R&D covers both planar and single-sided 3D columnar pixel devices made with the Si-Si Direct Wafer Bonding technique, which allows for the production of sensors with 100 µm and 130 µm active thickness for planar sensors, and 130 µm for 3D sensors, the thinnest ones ever produced so far. Prototypes of hybrid modules, bump-bonded to the RD53A readout chip, have been tested on beam. First results on their performance before and after irradiation are presented.

Ceccarelli, R., Meschini, M., Viliani, L., Dinardo, M., Gennai, S., Menasce, D., et al. (2019). Characterization of planar and 3D Silicon pixel sensors for the high luminosity phase of the CMS experiment at LHC. In 2019 European Physical Society Conference on High Energy Physics, EPS-HEP 2019; Ghent; Belgium; 10-17 July 2019. Sissa Medialab Srl.

Characterization of planar and 3D Silicon pixel sensors for the high luminosity phase of the CMS experiment at LHC

Dinardo M.;Moroni L.;Zuolo D.;
2019

Abstract

The High Luminosity upgrade of the CERN LHC collider (HL-LHC) demands for a new, high-radiation tolerant solid-state pixel sensor capable of surviving fluencies up to a few 1016 neq/cm2 at ∼3cm from the interaction point. To this extent the INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler (FBK), is aiming at the development of thin n-in-p type pixel sensors for the HL-LHC. The R&D covers both planar and single-sided 3D columnar pixel devices made with the Si-Si Direct Wafer Bonding technique, which allows for the production of sensors with 100 µm and 130 µm active thickness for planar sensors, and 130 µm for 3D sensors, the thinnest ones ever produced so far. Prototypes of hybrid modules, bump-bonded to the RD53A readout chip, have been tested on beam. First results on their performance before and after irradiation are presented.
abstract + slide
silicon, detector
English
European Physical Society Conference on High Energy Physics, EPS-HEP 2019 - JUL 10-17, 2019
2019
Lowette, S
2019 European Physical Society Conference on High Energy Physics, EPS-HEP 2019; Ghent; Belgium; 10-17 July 2019
2019
364
117
none
Ceccarelli, R., Meschini, M., Viliani, L., Dinardo, M., Gennai, S., Menasce, D., et al. (2019). Characterization of planar and 3D Silicon pixel sensors for the high luminosity phase of the CMS experiment at LHC. In 2019 European Physical Society Conference on High Energy Physics, EPS-HEP 2019; Ghent; Belgium; 10-17 July 2019. Sissa Medialab Srl.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/309537
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