This work presents a statistical characterization of the set operation in phase change memory (PCM) arrays. The set performance was studied in devices programmed with increasing size of the amorphous region by means of suitable reset pulses. The thickness-dependent set time and statistics are explained by the different roles of the nucleation and growth of crystalline grains in the amorphous volume. We then analyzed the set transition kinetics comparing 2 set techniques, namely: i) crystallization in the solid state through rectangular pulses below the reset level and ii) crystallization from the liquid phase through triangular pulses above the reset level. The experimental results provide guiding rules for minimizing the energy consumption and the switching variability in PCM arrays.

Rizzi, M., Ciocchini, N., Caravati, S., Bernasconi, M., Fantini, P., Ielmini, D. (2015). Statistics of set transition in phase change memory (PCM) arrays. In 2014 IEEE International Electron Devices Meeting (pp.29.6.1-29.6.4). Institute of Electrical and Electronics Engineers Inc. [10.1109/IEDM.2014.7047136].

Statistics of set transition in phase change memory (PCM) arrays

Caravati, S;Bernasconi, M;
2015

Abstract

This work presents a statistical characterization of the set operation in phase change memory (PCM) arrays. The set performance was studied in devices programmed with increasing size of the amorphous region by means of suitable reset pulses. The thickness-dependent set time and statistics are explained by the different roles of the nucleation and growth of crystalline grains in the amorphous volume. We then analyzed the set transition kinetics comparing 2 set techniques, namely: i) crystallization in the solid state through rectangular pulses below the reset level and ii) crystallization from the liquid phase through triangular pulses above the reset level. The experimental results provide guiding rules for minimizing the energy consumption and the switching variability in PCM arrays.
slide + paper
phase change memories, atomistic simulations
English
2014 60th IEEE International Electron Devices Meeting, IEDM 2014
2014
2014 IEEE International Electron Devices Meeting
978-1-4799-8001-7
2015
2015-
February
29.6.1
29.6.4
7047136
https://ieeexplore.ieee.org/document/7047136
none
Rizzi, M., Ciocchini, N., Caravati, S., Bernasconi, M., Fantini, P., Ielmini, D. (2015). Statistics of set transition in phase change memory (PCM) arrays. In 2014 IEEE International Electron Devices Meeting (pp.29.6.1-29.6.4). Institute of Electrical and Electronics Engineers Inc. [10.1109/IEDM.2014.7047136].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/300668
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