A front-end for read/write operations on a One-Time-Programmable (OTP) memory, designed and fabricated in High-Voltage Silicon-On-Insulator (HVSOI) technology, is presented. In the considered integrated HV technology, the memory element consists of an antifuse type structure and it is implemented using a 5V NMOS with L=1 μm and W=1.2 μm. The design of the front-end circuit that enables the bit's read/write operations within the memory is described and experimental results validate the successful implementation.
Arosio, M., Boffino, C., Morini, S., Priefert, D., Albayrak, O., Boguszewicz, V., et al. (2019). A read/write front-end for an antifuse one-time-programmable memory in high voltage silicon-on-insulator technology. In 2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019 (pp.606-609). Institute of Electrical and Electronics Engineers Inc. [10.1109/ICECS46596.2019.8964741].
A read/write front-end for an antifuse one-time-programmable memory in high voltage silicon-on-insulator technology
Arosio, Martina
;Baschirotto, Andrea
2019
Abstract
A front-end for read/write operations on a One-Time-Programmable (OTP) memory, designed and fabricated in High-Voltage Silicon-On-Insulator (HVSOI) technology, is presented. In the considered integrated HV technology, the memory element consists of an antifuse type structure and it is implemented using a 5V NMOS with L=1 μm and W=1.2 μm. The design of the front-end circuit that enables the bit's read/write operations within the memory is described and experimental results validate the successful implementation.
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