Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process.

Zhang, C., Jazaeri, F., Borghello, G., Mattiazzo, S., Baschirotto, A., Enz, C. (2018). Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses. In Proceedings of 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018 (pp.162-163). Institute of Electrical and Electronics Engineers Inc. [10.1109/CICTA.2018.8705713].

Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

Baschirotto A.;
2018

Abstract

Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process.
paper
radiation effects
English
1st IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018 21 - 23 November
2018
Proceedings of 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018
9781538665503
2018
162
163
8705713
none
Zhang, C., Jazaeri, F., Borghello, G., Mattiazzo, S., Baschirotto, A., Enz, C. (2018). Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses. In Proceedings of 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018 (pp.162-163). Institute of Electrical and Electronics Engineers Inc. [10.1109/CICTA.2018.8705713].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/290449
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