This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems.

Zhang, C., Jazaeri, F., Borghello, G., Mattiazzo, S., Baschirotto, A., Enz, C. (2018). Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs. In 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. [10.1109/NSSMIC.2018.8824379].

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

Baschirotto A.;
2018

Abstract

This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems.
paper
1 Grad; 28-nm bulk MOSFETs; Bias condition; interface traps; narrow-channel effect; oxide traps; short-channel effect; total ionizing dose;
1 Grad; 28-nm bulk MOSFETs; Bias condition; interface traps; narrow-channel effect; oxide traps; short-channel effect; total ionizing dose
English
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2018
2018
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2018 - Proceedings
9781538684948
2018
8824379
none
Zhang, C., Jazaeri, F., Borghello, G., Mattiazzo, S., Baschirotto, A., Enz, C. (2018). Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs. In 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. [10.1109/NSSMIC.2018.8824379].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/290356
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