High-quality nitrogen-doped graphene on nickel is prepared by exploiting both the catalytic properties of nickel and the solubility of nitrogen atoms into its bulk. Following the standard chemical vapor deposition procedure, a previously nitrogen-doped nickel substrate is exposed to carbon-containing precursors so that nitrogen atoms, segregating to the surface, remain trapped in the growing gra- phene network. Morphological and chemical characterization by scanning tunneling microscopy and X- ray photoelectron spectroscopy demonstrates that the process yields a flat, wide, continuous nitrogen- doped graphene layer. Experimental results are combined with a thorough density functional theory investigation of possible structural models, to obtain a clear description at the atomic scale of the various configurations of the nitrogen atoms observed in the graphene mesh. This growth method is potentially scalable and suitable for the production of high-performance nano-devices with well-defined nitrogen centers, to be exploited as metal-free carbon-based catalysts in several applicative fields such as elec- trochemistry, energy storage, gas storage/sensing or wastewater treatment.

Fiori, S., Perilli, D., Panighel, M., Cepek, C., Ugolotti, A., Sala, A., et al. (2021). “Inside out” growth method for high-quality nitrogen-doped graphene. CARBON, 171, 704-710 [10.1016/j.carbon.2020.09.056].

“Inside out” growth method for high-quality nitrogen-doped graphene

Perilli, Daniele
Co-primo
;
Ugolotti, Aldo;Liu, Hongsheng;Di Valentin, Cristiana
Co-ultimo
;
2021

Abstract

High-quality nitrogen-doped graphene on nickel is prepared by exploiting both the catalytic properties of nickel and the solubility of nitrogen atoms into its bulk. Following the standard chemical vapor deposition procedure, a previously nitrogen-doped nickel substrate is exposed to carbon-containing precursors so that nitrogen atoms, segregating to the surface, remain trapped in the growing gra- phene network. Morphological and chemical characterization by scanning tunneling microscopy and X- ray photoelectron spectroscopy demonstrates that the process yields a flat, wide, continuous nitrogen- doped graphene layer. Experimental results are combined with a thorough density functional theory investigation of possible structural models, to obtain a clear description at the atomic scale of the various configurations of the nitrogen atoms observed in the graphene mesh. This growth method is potentially scalable and suitable for the production of high-performance nano-devices with well-defined nitrogen centers, to be exploited as metal-free carbon-based catalysts in several applicative fields such as elec- trochemistry, energy storage, gas storage/sensing or wastewater treatment.
No
Articolo in rivista - Articolo scientifico
Scientifica
Chemical vapor deposition; Defects; Doping; Graphene; Nitrogen;
Graphene; Nitrogen; Doping; Defects; Chemical vapor deposition
English
704
710
7
Fiori, S., Perilli, D., Panighel, M., Cepek, C., Ugolotti, A., Sala, A., et al. (2021). “Inside out” growth method for high-quality nitrogen-doped graphene. CARBON, 171, 704-710 [10.1016/j.carbon.2020.09.056].
Fiori, S; Perilli, D; Panighel, M; Cepek, C; Ugolotti, A; Sala, A; Liu, H; Comelli, G; Di Valentin, C; Africh, C
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10281/287555
Citazioni
  • Scopus 11
  • ???jsp.display-item.citation.isi??? 9
Social impact