Antimony telluride (Sb2Te3) thin films were prepared by a room temperature Metal-Organic Chemical Vapor Deposition (MOCVD) process using antimony chloride (SbCl3) and bis(trimethylsilyl)telluride (Te(SiMe3)2) as precursors. Pre-growth and post-growth treatments were found to be pivotal in favoring out-of-plane and in-plane alignment of the crystallites composing the films. A comprehensive suite of characterization techniques were used to evaluate their composition, surface roughness, as well as to assess their morphology, crystallinity, and structural features, revealing that a quick post-growth annealing triggers the formation of epitaxial-quality Sb2Te3films on Si(111).
Rimoldi, M., Cecchini, R., Wiemer, C., Lamperti, A., Longo, E., Nasi, L., et al. (2020). Epitaxial and large area Sb2Te3thin films on silicon by MOCVD. RSC ADVANCES, 10(34), 19936-19942 [10.1039/d0ra02567d].
Epitaxial and large area Sb2Te3thin films on silicon by MOCVD
Longo E.;
2020
Abstract
Antimony telluride (Sb2Te3) thin films were prepared by a room temperature Metal-Organic Chemical Vapor Deposition (MOCVD) process using antimony chloride (SbCl3) and bis(trimethylsilyl)telluride (Te(SiMe3)2) as precursors. Pre-growth and post-growth treatments were found to be pivotal in favoring out-of-plane and in-plane alignment of the crystallites composing the films. A comprehensive suite of characterization techniques were used to evaluate their composition, surface roughness, as well as to assess their morphology, crystallinity, and structural features, revealing that a quick post-growth annealing triggers the formation of epitaxial-quality Sb2Te3films on Si(111).
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