Antimony telluride (Sb2Te3) thin films were prepared by a room temperature Metal-Organic Chemical Vapor Deposition (MOCVD) process using antimony chloride (SbCl3) and bis(trimethylsilyl)telluride (Te(SiMe3)2) as precursors. Pre-growth and post-growth treatments were found to be pivotal in favoring out-of-plane and in-plane alignment of the crystallites composing the films. A comprehensive suite of characterization techniques were used to evaluate their composition, surface roughness, as well as to assess their morphology, crystallinity, and structural features, revealing that a quick post-growth annealing triggers the formation of epitaxial-quality Sb2Te3films on Si(111).

Rimoldi, M., Cecchini, R., Wiemer, C., Lamperti, A., Longo, E., Nasi, L., et al. (2020). Epitaxial and large area Sb2Te3thin films on silicon by MOCVD. RSC ADVANCES, 10(34), 19936-19942 [10.1039/d0ra02567d].

Epitaxial and large area Sb2Te3thin films on silicon by MOCVD

Longo E.;
2020

Abstract

Antimony telluride (Sb2Te3) thin films were prepared by a room temperature Metal-Organic Chemical Vapor Deposition (MOCVD) process using antimony chloride (SbCl3) and bis(trimethylsilyl)telluride (Te(SiMe3)2) as precursors. Pre-growth and post-growth treatments were found to be pivotal in favoring out-of-plane and in-plane alignment of the crystallites composing the films. A comprehensive suite of characterization techniques were used to evaluate their composition, surface roughness, as well as to assess their morphology, crystallinity, and structural features, revealing that a quick post-growth annealing triggers the formation of epitaxial-quality Sb2Te3films on Si(111).
Articolo in rivista - Articolo scientifico
MOCVD, epitaxy, topological insulator
English
2020
10
34
19936
19942
none
Rimoldi, M., Cecchini, R., Wiemer, C., Lamperti, A., Longo, E., Nasi, L., et al. (2020). Epitaxial and large area Sb2Te3thin films on silicon by MOCVD. RSC ADVANCES, 10(34), 19936-19942 [10.1039/d0ra02567d].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/282708
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