We describe a method we used to characterize micro-strip sensors, which were non-uniformly irradiated up to a fluence of ∼ 1014 1 MeV equivalent neutrons per cm2. The method allows for a complete bidimensional mapping of the sensor characteristics over the entire active area. Information is gathered through the Q-V characteristic, measured scanning the sensor with an infra-red laser source. Q-V characteristics are then fitted to a simple analytical model, which returns local full-depletion voltages, carrier lifetimes, etc. With the present method one can even obtain the profile of the absorbed fluence. The development and tuning of the present method have been done in the context of the R&D programs for the micro-strip forward tracker of the BTeV experiment at the Tevatron. © 2006 Elsevier B.V. All rights reserved.

Dinardo, M., Alimonti, G., Chiodini, G., d'Angelo, P., Moroni, L., & Sala, S. (2007). Characterization of non-uniformly irradiated silicon micro-strip sensors. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, 571(3), 636-643 [10.1016/j.nima.2006.11.038].

Characterization of non-uniformly irradiated silicon micro-strip sensors

Dinardo M. E.
Primo
Membro del Collaboration Group
;
Moroni L.
Secondo
Membro del Collaboration Group
;
2007

Abstract

We describe a method we used to characterize micro-strip sensors, which were non-uniformly irradiated up to a fluence of ∼ 1014 1 MeV equivalent neutrons per cm2. The method allows for a complete bidimensional mapping of the sensor characteristics over the entire active area. Information is gathered through the Q-V characteristic, measured scanning the sensor with an infra-red laser source. Q-V characteristics are then fitted to a simple analytical model, which returns local full-depletion voltages, carrier lifetimes, etc. With the present method one can even obtain the profile of the absorbed fluence. The development and tuning of the present method have been done in the context of the R&D programs for the micro-strip forward tracker of the BTeV experiment at the Tevatron. © 2006 Elsevier B.V. All rights reserved.
Articolo in rivista - Articolo scientifico
Scientifica
Laser, Radiation hardness, Sensor characterization, Silicon micro-strip,
English
Dinardo, M., Alimonti, G., Chiodini, G., d'Angelo, P., Moroni, L., & Sala, S. (2007). Characterization of non-uniformly irradiated silicon micro-strip sensors. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, 571(3), 636-643 [10.1016/j.nima.2006.11.038].
Dinardo, M; Alimonti, G; Chiodini, G; D'Angelo, P; Moroni, L; Sala, S
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10281/281604
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