This paper deals with Pr-doped and Pr, Si-codoped YAlO3 single crystal growth by the micro-pulling-down method and investigation of their spectroscopic and scintillating properties. The Pr3+ 5d-4f radioluminescence intensity is more than 10 times higher than that of Bi 4Ge3O12 standard sample, but the Si-codoping decreases it. Absorption spectra of as-grown and air-annealed Si,Pr-codoped YAlO3 samples show along with an onset of 4f-5d transition round 230 nm the induced absorption band at 400 nm which possibly related to a hole center absorption (Pr4+ or O-). Thermoluminescence measurements above the room temperature were performed in order to monitor deep electron traps. Strong concentration dependence of thermoluminescence was observed for Pr:YAlO3 glow curves.
Zhuravleva, M., Novoselov, A., Mihokova, E., Mares, J., Vedda, A., Nikl, M., et al. (2007). Crystal growth and scintillating properties of (Pr,Si)-doped YAlO3. CRYSTAL RESEARCH AND TECHNOLOGY, 42(12), 1324-1328 [10.1002/crat.200711026].
Crystal growth and scintillating properties of (Pr,Si)-doped YAlO3
VEDDA, ANNA GRAZIELLA;
2007
Abstract
This paper deals with Pr-doped and Pr, Si-codoped YAlO3 single crystal growth by the micro-pulling-down method and investigation of their spectroscopic and scintillating properties. The Pr3+ 5d-4f radioluminescence intensity is more than 10 times higher than that of Bi 4Ge3O12 standard sample, but the Si-codoping decreases it. Absorption spectra of as-grown and air-annealed Si,Pr-codoped YAlO3 samples show along with an onset of 4f-5d transition round 230 nm the induced absorption band at 400 nm which possibly related to a hole center absorption (Pr4+ or O-). Thermoluminescence measurements above the room temperature were performed in order to monitor deep electron traps. Strong concentration dependence of thermoluminescence was observed for Pr:YAlO3 glow curves.
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