We present an investigation of the structural quality of arrays of 3C-SiC micropillars and microridges grown epitaxially on deeply etched Si(0 0 1) substrates offcut towards [1 1 0]. Using high resolution X-ray diffraction with reciprocal space mapping and optical as well as scanning electron microscopy, we obtain information about the stacking fault (SF) formation in different crystallographic directions. The SF density is strongly correlated with the microcrystal size and orientation and a reduction of the SF density is found in the [1 1 1] and [1 −1 1] directions. No variation of the average SF size was detected for varying SiC microcrystal size and shape.

Meduna, M., Kreiliger, T., Mauceri, M., Puglisi, M., Mancarella, F., La Via, F., et al. (2019). X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers. JOURNAL OF CRYSTAL GROWTH, 507, 70-76 [10.1016/j.jcrysgro.2018.10.046].

X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers

Miglio L.;
2019

Abstract

We present an investigation of the structural quality of arrays of 3C-SiC micropillars and microridges grown epitaxially on deeply etched Si(0 0 1) substrates offcut towards [1 1 0]. Using high resolution X-ray diffraction with reciprocal space mapping and optical as well as scanning electron microscopy, we obtain information about the stacking fault (SF) formation in different crystallographic directions. The SF density is strongly correlated with the microcrystal size and orientation and a reduction of the SF density is found in the [1 1 1] and [1 −1 1] directions. No variation of the average SF size was detected for varying SiC microcrystal size and shape.
Articolo in rivista - Articolo scientifico
A1. High resolution X-ray diffraction; A1. Low dimensional structures; A1. Planar defects; B1. Carbides; B2. Semiconducting silicon compounds
English
2019
507
70
76
none
Meduna, M., Kreiliger, T., Mauceri, M., Puglisi, M., Mancarella, F., La Via, F., et al. (2019). X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers. JOURNAL OF CRYSTAL GROWTH, 507, 70-76 [10.1016/j.jcrysgro.2018.10.046].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/272630
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