Silicon carbide (SiC) is one of the compound semiconductor which has been considered as a potential alternative to Silicon for the fabrication of radiation hard particles detectors. Material, detectors implementation and possible application in the future INFN projects has been discussed.

Tudisco, S., Altana, C., Boscardin, M., Calcagno, L., Ciampi, C., Cirrone, G., et al. (2019). Silicon carbide for future intense luminosity nuclear physics investigations. IL NUOVO CIMENTO C, 42(2-3) [10.1393/ncc/i2019-19074-1].

Silicon carbide for future intense luminosity nuclear physics investigations

Gorini G.;Rebai M.;
2019

Abstract

Silicon carbide (SiC) is one of the compound semiconductor which has been considered as a potential alternative to Silicon for the fabrication of radiation hard particles detectors. Material, detectors implementation and possible application in the future INFN projects has been discussed.
Articolo in rivista - Articolo scientifico
silicon carbide; nuclear physics
English
2019
42
2-3
X
none
Tudisco, S., Altana, C., Boscardin, M., Calcagno, L., Ciampi, C., Cirrone, G., et al. (2019). Silicon carbide for future intense luminosity nuclear physics investigations. IL NUOVO CIMENTO C, 42(2-3) [10.1393/ncc/i2019-19074-1].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/270852
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