The onset of plastic relaxation in SiGe islands grown on pit-patterned Si(001) substrates is investigated using elasticity theory solved by finite element methods. Larger critical island volumes with respect to the unpatterned case are predicted. A justification based on the qualitatively different stressors acting on the substrate in the presence of pits is provided. Experimental results in terms of critical SiGe-island volumes as a function of the Ge content are nicely reproduced by the model.
Boioli, F., Gatti, R., Grydlik, M., Brehm, M., Montalenti, F., Miglio, L. (2011). Assessing the delay of plastic relaxation onset in SiGe islands grown on pit-patterned Si(001) substrates. APPLIED PHYSICS LETTERS, 99(3) [10.1063/1.3615285].
Assessing the delay of plastic relaxation onset in SiGe islands grown on pit-patterned Si(001) substrates
BOIOLI, FRANCESCA
;MONTALENTI, FRANCESCO CIMBRO MATTIA;MIGLIO, LEONIDA
2011
Abstract
The onset of plastic relaxation in SiGe islands grown on pit-patterned Si(001) substrates is investigated using elasticity theory solved by finite element methods. Larger critical island volumes with respect to the unpatterned case are predicted. A justification based on the qualitatively different stressors acting on the substrate in the presence of pits is provided. Experimental results in terms of critical SiGe-island volumes as a function of the Ge content are nicely reproduced by the model.
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