Titanium and titanium nitride layers were alternately sputtered on a high resistivity silicon wafer to obtain a multilayer film structure, for a total thickness ranging between 34 and 180 nm. The electrical resistance of the Ti/TiN film was characterized from room temperature down to the superconducting transition. Both the resistivity just above the transition and the critical temperature were investigated as a function of the total film thickness and the single TiN layer thickness, respectively. The obtained resistivity range is 67-312 μΩ cm. Exploiting the proximity effect, we were able to tune the critical temperature in the 0.29-4.5 K range. A comparison between experimental data and theoretical models is proposed in order to facilitate the a priori design of superconducting detectors.
Faverzani, M., Ferri, E., Giachero, A., Giordano, C., Margesin, B., Mezzena, R., et al. (2020). Characterization of the low temperature behavior of thin Titanium/Titanium Nitride multilayer films. SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 33(4) [10.1088/1361-6668/ab7435].
Characterization of the low temperature behavior of thin Titanium/Titanium Nitride multilayer films
Faverzani, M;Ferri, E;Giachero, A;Giordano, C;Nucciotti, A;Puiu, A
2020
Abstract
Titanium and titanium nitride layers were alternately sputtered on a high resistivity silicon wafer to obtain a multilayer film structure, for a total thickness ranging between 34 and 180 nm. The electrical resistance of the Ti/TiN film was characterized from room temperature down to the superconducting transition. Both the resistivity just above the transition and the critical temperature were investigated as a function of the total film thickness and the single TiN layer thickness, respectively. The obtained resistivity range is 67-312 μΩ cm. Exploiting the proximity effect, we were able to tune the critical temperature in the 0.29-4.5 K range. A comparison between experimental data and theoretical models is proposed in order to facilitate the a priori design of superconducting detectors.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.