The design of MOSFET devices with high carrier mobility requires knowledge the strain in the channel and understanding its effect on the band structure [1,2]. We present an experimental study of strain, composition and electronic structure by Tip Enhanced Raman Scattering and X-Ray Photoelectron Emission Microscopy of SiGe nanostripes on Si(001). We mapped the perpendicular strain profile, composition, work function and valence band with a lateral resolution better than 100 nm. These results give fundamental insight into the strain-induced modification of the valence band inside a single nanostripe. 3D FEM and first-principles calculations are successfully compared to the experimental results. [1] J. Xiang et al., Nature 441 (2006) 489-493 [2] H. Ko et al., Nature 468 (2010) 286–289

Vanacore, G., Chaigneau, M., Barrett, N., Bollani, M., Chrastina, D., Isella, G., et al. (2011). Nanoscale mapping of strain, composition and electronic structure in SiGe nano-stripes. In Congresso Nazionale della Società Italiana di Fisica.

Nanoscale mapping of strain, composition and electronic structure in SiGe nano-stripes

Vanacore, GM;
2011

Abstract

The design of MOSFET devices with high carrier mobility requires knowledge the strain in the channel and understanding its effect on the band structure [1,2]. We present an experimental study of strain, composition and electronic structure by Tip Enhanced Raman Scattering and X-Ray Photoelectron Emission Microscopy of SiGe nanostripes on Si(001). We mapped the perpendicular strain profile, composition, work function and valence band with a lateral resolution better than 100 nm. These results give fundamental insight into the strain-induced modification of the valence band inside a single nanostripe. 3D FEM and first-principles calculations are successfully compared to the experimental results. [1] J. Xiang et al., Nature 441 (2006) 489-493 [2] H. Ko et al., Nature 468 (2010) 286–289
relazione (orale)
SiGe nanostripes; strain, composition and electronic structure mapping; Tip Enhanced Raman Scattering; X-Ray Photoelectron Emission Microscopy (X-PEEM); 3D Finite Element Modelling simulations; ab initio first-principles calculations
Italian
Congresso Nazionale della Società Italiana di Fisica 26-30/09
2011
Congresso Nazionale della Società Italiana di Fisica
2011
none
Vanacore, G., Chaigneau, M., Barrett, N., Bollani, M., Chrastina, D., Isella, G., et al. (2011). Nanoscale mapping of strain, composition and electronic structure in SiGe nano-stripes. In Congresso Nazionale della Società Italiana di Fisica.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/253511
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