The design of MOSFET devices with high carrier mobility requires knowledge the strain in the channel and understanding its effect on the band structure [1,2]. We present an experimental study of strain, composition and electronic structure by Tip Enhanced Raman Scattering and X-Ray Photoelectron Emission Microscopy of SiGe nanostripes on Si(001). We mapped the perpendicular strain profile, composition, work function and valence band with a lateral resolution better than 100 nm. These results give fundamental insight into the strain-induced modification of the valence band inside a single nanostripe. 3D FEM and first-principles calculations are successfully compared to the experimental results. [1] J. Xiang et al., Nature 441 (2006) 489-493 [2] H. Ko et al., Nature 468 (2010) 286–289
Vanacore, G., Chaigneau, M., Barrett, N., Bollani, M., Chrastina, D., Isella, G., et al. (2011). Nanoscale mapping of strain, composition and electronic structure in SiGe nano-stripes. In Congresso Nazionale della Società Italiana di Fisica.
Nanoscale mapping of strain, composition and electronic structure in SiGe nano-stripes
Vanacore, GM;
2011
Abstract
The design of MOSFET devices with high carrier mobility requires knowledge the strain in the channel and understanding its effect on the band structure [1,2]. We present an experimental study of strain, composition and electronic structure by Tip Enhanced Raman Scattering and X-Ray Photoelectron Emission Microscopy of SiGe nanostripes on Si(001). We mapped the perpendicular strain profile, composition, work function and valence band with a lateral resolution better than 100 nm. These results give fundamental insight into the strain-induced modification of the valence band inside a single nanostripe. 3D FEM and first-principles calculations are successfully compared to the experimental results. [1] J. Xiang et al., Nature 441 (2006) 489-493 [2] H. Ko et al., Nature 468 (2010) 286–289
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