The continued downscaling in SiGe heterostructures is approaching the point at which lateral confinement leads to a uniaxial strain state, giving high enhancements of the charge carrier mobility. Investigation of the strain relaxation as induced by the patterning of a continuous SiGe layer is thus of scientific and technological importance. In the present work, the strain in single lithographically defined low-dimensional SiGe structures has been directly mapped via nanobeam x-ray diffraction. We found that the nanopatterning is able to induce an anisotropic strain relaxation, leading to a conversion of the strain state from biaxial to uniaxial. Its origin is fully compatible with a pure elastic deformation of the crystal lattice without involving plastic relaxation by injection of misfit dislocations

Chrastina, D., Vanacore, G., Bollani, M., Boye, P., Schoeder, S., Burghammer, M., et al. (2012). Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction. NANOTECHNOLOGY, 23(15), 1-10 [10.1088/0957-4484/23/15/155702].

Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction

Vanacore, GM;
2012

Abstract

The continued downscaling in SiGe heterostructures is approaching the point at which lateral confinement leads to a uniaxial strain state, giving high enhancements of the charge carrier mobility. Investigation of the strain relaxation as induced by the patterning of a continuous SiGe layer is thus of scientific and technological importance. In the present work, the strain in single lithographically defined low-dimensional SiGe structures has been directly mapped via nanobeam x-ray diffraction. We found that the nanopatterning is able to induce an anisotropic strain relaxation, leading to a conversion of the strain state from biaxial to uniaxial. Its origin is fully compatible with a pure elastic deformation of the crystal lattice without involving plastic relaxation by injection of misfit dislocations
Articolo in rivista - Articolo scientifico
X-Ray Nanodiffraction, SiGe nanostructures, Strain mapping
English
2012
23
15
1
10
155702
none
Chrastina, D., Vanacore, G., Bollani, M., Boye, P., Schoeder, S., Burghammer, M., et al. (2012). Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction. NANOTECHNOLOGY, 23(15), 1-10 [10.1088/0957-4484/23/15/155702].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/252502
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