A broad band with a fine structure on the higher energy side has been commonly observed in photoluminescence at 4.2 K from compensated Si for solar cells involving P donors and B acceptors on the order of 1016 cm 3. We calculated the theoretical spectrum of donor acceptor (DA) pair luminescence from the density distribution of pairs as a function of the transition energy of respective pairs with separations ranging from 1.9 to 3.3 nm. A close agreement was obtained between the observed spectral structure and the theoretical curve using the generally accepted P donor and B acceptor ionization energies, where a systematic deviation was explained by the Van der Waals interaction between shallow P donors and B acceptors. This allows us to conclude that the band with the fine structure is due to the P-donor B-acceptor pair recombination. This identification was confirmed by the observation of As-donor B-acceptor pair luminescence in an As-doped sample. The present findings indicate that P and B impurities with concentrations on the order of 1016 cm 3 are unlikely to form complexes and that their ionization energies are not changed from those in the low concentration range
Tajima, M., Iwai, T., Toyota, H., Binetti, S., Macdonald, D. (2011). Donor−acceptor pair luminescence in compensated Si for solar cells. JOURNAL OF APPLIED PHYSICS, 110(4), 043506 [10.1063/1.3622560].
Donor−acceptor pair luminescence in compensated Si for solar cells
BINETTI, SIMONA OLGA;
2011
Abstract
A broad band with a fine structure on the higher energy side has been commonly observed in photoluminescence at 4.2 K from compensated Si for solar cells involving P donors and B acceptors on the order of 1016 cm 3. We calculated the theoretical spectrum of donor acceptor (DA) pair luminescence from the density distribution of pairs as a function of the transition energy of respective pairs with separations ranging from 1.9 to 3.3 nm. A close agreement was obtained between the observed spectral structure and the theoretical curve using the generally accepted P donor and B acceptor ionization energies, where a systematic deviation was explained by the Van der Waals interaction between shallow P donors and B acceptors. This allows us to conclude that the band with the fine structure is due to the P-donor B-acceptor pair recombination. This identification was confirmed by the observation of As-donor B-acceptor pair luminescence in an As-doped sample. The present findings indicate that P and B impurities with concentrations on the order of 1016 cm 3 are unlikely to form complexes and that their ionization energies are not changed from those in the low concentration rangeI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.