Thirty-three-thousand CLARO8 ASICs were produced in 0.35μm CMOS technology and will be installed in the upgraded LHCb detector at CERN. Radiation hardness has been extensively characterized and compared to prototype production.
Andreotti, M., Baszczyk, M., Bolognesi, M., Calabrese, R., Carniti, P., Cassina, L., et al. (2018). Radiation Hardness Qualification of the Amplifier/Discriminator ASICs Production for the Upgrade of the LHCb RICH Detector Front-end Electronics. In 2018 IEEE Nuclear and Space Radiation Effects Conference, NSREC 2018 (pp.105-108). Institute of Electrical and Electronics Engineers Inc. [10.1109/NSREC.2018.8584280].
Radiation Hardness Qualification of the Amplifier/Discriminator ASICs Production for the Upgrade of the LHCb RICH Detector Front-end Electronics
ANDREOTTI, MASSIMO;Bolognesi, M;Calabrese, R;Carniti, P;Cassina, L;Giachero, A;Gotti, C;Maino, M;Pessina, G;
2018
Abstract
Thirty-three-thousand CLARO8 ASICs were produced in 0.35μm CMOS technology and will be installed in the upgraded LHCb detector at CERN. Radiation hardness has been extensively characterized and compared to prototype production.
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