The paper presents the characterization of a Hamamatsu S13360-1350CS silicon photomultiplier (50 μm cell pitch, 1.3 × 1.3 mm 2 total area) in single photon counting regime, in view of possible applications in next generation ring imaging Cherenkov detectors. Dark count rate and time resolution were measured as a function of bias voltage and temperature. Crosstalk, afterpulse and photon detection efficiency were characterized. The device, cooled below -10°C and operated at a moderate 2 V overvoltage, offers excellent single photon counting performance with a time resolution of about 130 ps RMS
Calvi, M., Carniti, P., Cassina, L., Gotti, C., Matteuzzi, C., Pessina, G. (2018). Tests of Single Photon Counting at Sub-Nanosecond Precision for Next Generation RICH Detectors. In 2017 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2017 - Conference Proceedings (pp.1-3). Institute of Electrical and Electronics Engineers Inc. [10.1109/NSSMIC.2017.8532759].
Tests of Single Photon Counting at Sub-Nanosecond Precision for Next Generation RICH Detectors
Calvi, M;Carniti, P
;Cassina, L;Gotti, C;Pessina, G
2018
Abstract
The paper presents the characterization of a Hamamatsu S13360-1350CS silicon photomultiplier (50 μm cell pitch, 1.3 × 1.3 mm 2 total area) in single photon counting regime, in view of possible applications in next generation ring imaging Cherenkov detectors. Dark count rate and time resolution were measured as a function of bias voltage and temperature. Crosstalk, afterpulse and photon detection efficiency were characterized. The device, cooled below -10°C and operated at a moderate 2 V overvoltage, offers excellent single photon counting performance with a time resolution of about 130 ps RMSI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.