The reactivity towards CO and air of SnO2 defects, singly and doubly ionized oxygen vacancies (V(o)/· V(o)/··), bivalent tin centers, was studied in ruthenium-supported tin oxide (Ru/SnO2), and compared with that in pure SnO2. Electron paramagnetic resonance and X-ray photoelectron spectroscopy studies demonstrated that CO treatment produces V(o)/· and V(o)/·· defects in SnO2, some V(o)/· transferring their electrons to Sn4+ centers; instead in Ru/SnO2, some V(o)/· defects transferred their electrons to Ru(n+) centers (n=0,1,2,3) and no one bivalent tin center was observed. When contacted with air, pure SnO2 transferred a part of the electrons of V(o)/· and of bivalent tin centers to O2, instead Ru/SnO2 emptied all V(o)/· defects transferring the electrons from V(o)/· to ruthenium and to O2. The via ruthenium transfer increases the number of electrons exchanged between SnO2 and the surrounding atmosphere and gave a rationale for the higher sensitivity towards CO displayed by transition metal-doped SnO2 with respect to pure SnO2. (C) 2000 Elsevier Science Ltd.

Chiodini, N., Canevali, C., Morazzoni, F., Scotti, R., Bianchi, C. (2000). Defect chemistry in ruthenium-supported tin dioxide: a spectromagnetic approach. INTERNATIONAL JOURNAL OF INORGANIC MATERIALS, 2(4), 355-363 [10.1016/S1466-6049(00)00035-0].

Defect chemistry in ruthenium-supported tin dioxide: a spectromagnetic approach

CHIODINI, NORBERTO;CANEVALI, CARMEN;MORAZZONI, FRANCA;SCOTTI, ROBERTO;
2000

Abstract

The reactivity towards CO and air of SnO2 defects, singly and doubly ionized oxygen vacancies (V(o)/· V(o)/··), bivalent tin centers, was studied in ruthenium-supported tin oxide (Ru/SnO2), and compared with that in pure SnO2. Electron paramagnetic resonance and X-ray photoelectron spectroscopy studies demonstrated that CO treatment produces V(o)/· and V(o)/·· defects in SnO2, some V(o)/· transferring their electrons to Sn4+ centers; instead in Ru/SnO2, some V(o)/· defects transferred their electrons to Ru(n+) centers (n=0,1,2,3) and no one bivalent tin center was observed. When contacted with air, pure SnO2 transferred a part of the electrons of V(o)/· and of bivalent tin centers to O2, instead Ru/SnO2 emptied all V(o)/· defects transferring the electrons from V(o)/· to ruthenium and to O2. The via ruthenium transfer increases the number of electrons exchanged between SnO2 and the surrounding atmosphere and gave a rationale for the higher sensitivity towards CO displayed by transition metal-doped SnO2 with respect to pure SnO2. (C) 2000 Elsevier Science Ltd.
Articolo in rivista - Articolo scientifico
Tin dioxide; sensor; ruthenium; ESR; defect;
English
2000
2
4
355
363
none
Chiodini, N., Canevali, C., Morazzoni, F., Scotti, R., Bianchi, C. (2000). Defect chemistry in ruthenium-supported tin dioxide: a spectromagnetic approach. INTERNATIONAL JOURNAL OF INORGANIC MATERIALS, 2(4), 355-363 [10.1016/S1466-6049(00)00035-0].
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/23965
Citazioni
  • Scopus 24
  • ???jsp.display-item.citation.isi??? 22
Social impact