A process is developed for the fabrication of vertically arranged poly-silicon nanowires via a rigorously top-down batch process. The technique allows the production of wire arrays with larger linear density (projected on the surface) than those achievable with any of the other proposed top-down processes. © 2010 Elsevier B.V. All rights reserved.

Ferri, M., Suriano, F., Roncaglia, A., Solmi, S., Cerofolini, G., Romano, E., et al. (2011). Ultradense silicon nanowire arrays produced via top-down planar technology. MICROELECTRONIC ENGINEERING, 88(6), 877-881 [10.1016/j.mee.2010.11.034].

Ultradense silicon nanowire arrays produced via top-down planar technology

NARDUCCI, DARIO
2011

Abstract

A process is developed for the fabrication of vertically arranged poly-silicon nanowires via a rigorously top-down batch process. The technique allows the production of wire arrays with larger linear density (projected on the surface) than those achievable with any of the other proposed top-down processes. © 2010 Elsevier B.V. All rights reserved.
Articolo in rivista - Articolo scientifico
Silicon nanowires; Top-down processing; Electrical characteristics
English
2011
88
6
877
881
none
Ferri, M., Suriano, F., Roncaglia, A., Solmi, S., Cerofolini, G., Romano, E., et al. (2011). Ultradense silicon nanowire arrays produced via top-down planar technology. MICROELECTRONIC ENGINEERING, 88(6), 877-881 [10.1016/j.mee.2010.11.034].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/23868
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