We show that the use of modified droplet epitaxy allows to tune the wetting layer thickness in GaAs quantum dot structures. Morphological observations demonstrate that the wetting layer at the base of the dots can be controlled or even removed by changing the surface stoichiometry of substrates before droplet formations. Spectroscopical measurements show that the variation of the wetting layer thickness strongly influences the optical properties of the dots. The experimental transition energies of the dots well agree with a theoretical model based on effective mass approximation.
Sanguinetti, S., Watanabe, K., Tateno, T., Gurioli, M., Werner, P., Wakaki, M., et al. (2003). Modified droplet epitaxy GaAs/AlGaAs quantum dots grown on a variable thickness wetting layer. JOURNAL OF CRYSTAL GROWTH, 253(1-4), 71-76 [10.1016/S0022-0248(03)01016-9].
Modified droplet epitaxy GaAs/AlGaAs quantum dots grown on a variable thickness wetting layer
SANGUINETTI, STEFANO;
2003
Abstract
We show that the use of modified droplet epitaxy allows to tune the wetting layer thickness in GaAs quantum dot structures. Morphological observations demonstrate that the wetting layer at the base of the dots can be controlled or even removed by changing the surface stoichiometry of substrates before droplet formations. Spectroscopical measurements show that the variation of the wetting layer thickness strongly influences the optical properties of the dots. The experimental transition energies of the dots well agree with a theoretical model based on effective mass approximation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.