We analyze the photoluminescence temperature behavior of InGaAs/GaAs quantum dots grown by heterogeneous droplet epitaxy. Morphologically, these dots are nanocrystal InGaAs inclusions in the GaAs matrix, with a concave disk shape and, more important, no wetting layer is connecting the dots. The photoluminescence of the dots does not show any of the typical of the Stranski-Krastanov dots temperature properties, such as sigmoidal peak energy position and linewidth narrowing. We demonstrate that such behavior stems from the lacking of the thermally activated dot-dot coupling channel provided by the wetting layer thus preventing the establishment of a common quasiequilibrium in the whole dot ensemble.

Sanguinetti, S., Mano, T., Oshima, M., Tateno, T., Wakaki, M., Koguchi, N. (2002). Temperature dependence of the photoluminescence of InGaAs/GaAs quantum dot structures without wetting layer. APPLIED PHYSICS LETTERS, 81(16), 3067-3069 [10.1063/1.1516632].

Temperature dependence of the photoluminescence of InGaAs/GaAs quantum dot structures without wetting layer

SANGUINETTI, STEFANO;
2002

Abstract

We analyze the photoluminescence temperature behavior of InGaAs/GaAs quantum dots grown by heterogeneous droplet epitaxy. Morphologically, these dots are nanocrystal InGaAs inclusions in the GaAs matrix, with a concave disk shape and, more important, no wetting layer is connecting the dots. The photoluminescence of the dots does not show any of the typical of the Stranski-Krastanov dots temperature properties, such as sigmoidal peak energy position and linewidth narrowing. We demonstrate that such behavior stems from the lacking of the thermally activated dot-dot coupling channel provided by the wetting layer thus preventing the establishment of a common quasiequilibrium in the whole dot ensemble.
Articolo in rivista - Articolo scientifico
quantum nanostructures; dropet epitaxy, III-V semiconductor
English
2002
81
16
3067
3069
none
Sanguinetti, S., Mano, T., Oshima, M., Tateno, T., Wakaki, M., Koguchi, N. (2002). Temperature dependence of the photoluminescence of InGaAs/GaAs quantum dot structures without wetting layer. APPLIED PHYSICS LETTERS, 81(16), 3067-3069 [10.1063/1.1516632].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/23694
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