We present the detailed fabrication method of two different GaAs nanostructures with cylindrical symmetry by the Droplet Epitaxy technique. Concentric Multiple Rings or Coupled Rings/Disks are successfully obtained, exploiting the lateral growth around the Ga droplets, through a fine control of the crystallization dynamics. © 2010 IOP Publishing Ltd.
Somaschini, C., Bietti, S., Sanguinetti, S., Koguchi, N., Fedorov, A. (2010). Control of the lateral growth morphology in GaAs droplet epitaxy. JOURNAL OF PHYSICS. CONFERENCE SERIES, 245(1), 012082 [10.1088/1742-6596/245/1/012082].
Control of the lateral growth morphology in GaAs droplet epitaxy
SOMASCHINI, CLAUDIO;BIETTI, SERGIO;SANGUINETTI, STEFANO
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2010
Abstract
We present the detailed fabrication method of two different GaAs nanostructures with cylindrical symmetry by the Droplet Epitaxy technique. Concentric Multiple Rings or Coupled Rings/Disks are successfully obtained, exploiting the lateral growth around the Ga droplets, through a fine control of the crystallization dynamics. © 2010 IOP Publishing Ltd.
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