We present time resolved photoluminescence measurements of GaAs/Al /sub 0.3/Ga/sub 0.7/As quantum dot structures where no wetting layer is connecting the dots. We show that the two-dimensional character of the wetting layer is not relevant in determining the quantum dot capture, in contrast with the conclusions of several models so far presented in the literature.

Sanguinetti, S., Gurioli, M., Kuroda, T., Watanabe, K., Tateno, T., Minami, F., et al. (2003). Carrier relaxation in quantum dots without wetting layer. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 91-92 [10.1016/S1386-9477(02)00703-8].

Carrier relaxation in quantum dots without wetting layer

SANGUINETTI, STEFANO;
2003

Abstract

We present time resolved photoluminescence measurements of GaAs/Al /sub 0.3/Ga/sub 0.7/As quantum dot structures where no wetting layer is connecting the dots. We show that the two-dimensional character of the wetting layer is not relevant in determining the quantum dot capture, in contrast with the conclusions of several models so far presented in the literature.
Articolo in rivista - Articolo scientifico
quantum dots; III-V Semiconductors
English
2003
17
1-4
91
92
none
Sanguinetti, S., Gurioli, M., Kuroda, T., Watanabe, K., Tateno, T., Minami, F., et al. (2003). Carrier relaxation in quantum dots without wetting layer. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 91-92 [10.1016/S1386-9477(02)00703-8].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/23685
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