We report an experimental study on the recombination kinetics of single strain-free GaAs quantum dots (QDs) grown by modified droplet epitaxy. The different bands composing the single quantum dot emission line at high temperature show identical dynamics, proving the common origin of all contributions. Our results thus agree with the interpretation of the broad pedestal band appearing when increasing the temperature as originated from the phonon replica. Finally, the relative weight of the phonon replicas depends both on temperature and on the QD size, in agreement with the theoretical predictions. (C) 2008 American Institute of Physics.
Abbarchi, M., Gurioli, M., Vinattieri, A., Sanguinetti, S., Bonfanti, M., Mano, T., et al. (2008). Phonon sideband recombination kinetics in single quantum dots. JOURNAL OF APPLIED PHYSICS, 104(2), 023504 [10.1063/1.2948932].
Phonon sideband recombination kinetics in single quantum dots
SANGUINETTI, STEFANO;BONFANTI, MATTEO;
2008
Abstract
We report an experimental study on the recombination kinetics of single strain-free GaAs quantum dots (QDs) grown by modified droplet epitaxy. The different bands composing the single quantum dot emission line at high temperature show identical dynamics, proving the common origin of all contributions. Our results thus agree with the interpretation of the broad pedestal band appearing when increasing the temperature as originated from the phonon replica. Finally, the relative weight of the phonon replicas depends both on temperature and on the QD size, in agreement with the theoretical predictions. (C) 2008 American Institute of Physics.
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