We realized ultra-narrow excitonic emission from single GaAs/AlGaAs quantum dots (QDs) grown by a refined droplet epitaxy technique. We found that uncapped quantum dots can be annealed at 400 degrees C without major changes in their morphology, thus enabling an AlGaAs capping layer to be grown at that temperature. Consequently, we demonstrate a fourfold reduction of the linewidth of the emission together with an increased recombination lifetime, compared to the conventional droplet epitaxial QDs. The averaged linewidth of neutral excitons measured by micro-photoluminescence on single quantum dots was around 35 mu eV.
Mano, T., Abbarchi, M., Kuroda, T., Mastrandrea, C., Vinattieri, A., Sanguinetti, S., et al. (2009). Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy. NANOTECHNOLOGY, 20(39), 395601 [10.1088/0957-4484/20/39/395601].
Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy
SANGUINETTI, STEFANO;
2009
Abstract
We realized ultra-narrow excitonic emission from single GaAs/AlGaAs quantum dots (QDs) grown by a refined droplet epitaxy technique. We found that uncapped quantum dots can be annealed at 400 degrees C without major changes in their morphology, thus enabling an AlGaAs capping layer to be grown at that temperature. Consequently, we demonstrate a fourfold reduction of the linewidth of the emission together with an increased recombination lifetime, compared to the conventional droplet epitaxial QDs. The averaged linewidth of neutral excitons measured by micro-photoluminescence on single quantum dots was around 35 mu eV.
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