We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and the density from 10 7 to 10 9 cm -2. The islands show a standard deviation of base size distribution below 10% and their shape evolves changing the aspect ratio from 0.3 to 0.5 as size increases. Due to their characteristics, these islands are suitable to be used as local artificial substrates for the integration of III-V quantum nanostructures directly on silicon substrate. © 2010 The Author(s).
Bietti, S., Somaschini, C., Koguchi, N., Frigeri, C., Sanguinetti, S. (2010). Self-Assembled Local Artificial Substrates of GaAs on Si Substrate. NANOSCALE RESEARCH LETTERS, 5(12), 1905-1907 [10.1007/s11671-010-9760-5].
Self-Assembled Local Artificial Substrates of GaAs on Si Substrate
BIETTI, SERGIO;SOMASCHINI, CLAUDIO;SANGUINETTI, STEFANO
2010
Abstract
We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and the density from 10 7 to 10 9 cm -2. The islands show a standard deviation of base size distribution below 10% and their shape evolves changing the aspect ratio from 0.3 to 0.5 as size increases. Due to their characteristics, these islands are suitable to be used as local artificial substrates for the integration of III-V quantum nanostructures directly on silicon substrate. © 2010 The Author(s).
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