We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature a parts per thousand currency sign350A degrees C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.
Bietti, S., Somaschini, C., Sarti, E., Koguchi, N., Sanguinetti, S., Isella, G., et al. (2010). Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitaxy. NANOSCALE RESEARCH LETTERS, 5(10), 1650-1653 [10.1007/s11671-010-9689-8].
Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitaxy
BIETTI, SERGIO;SOMASCHINI, CLAUDIO;SANGUINETTI, STEFANO;
2010
Abstract
We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature a parts per thousand currency sign350A degrees C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.
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