We present the molecular beam epitaxy (MBE) fabrication of GaAs ring/disk nanostructures. In this system, a central quantum ring is surrounded by a flat outer disk-like region, which is developed following a layer-by-layer growth mode. We studied the influence of the growth temperature on the morphology of these nanostructures and found out a pronounced dependence only for the outer region diameter, which is interpreted in terms of larger Ga atoms surface diffusion length at higher temperatures. Our experimental data provide a fundamental parameter to control the final shape of GaAs coupled ring/disk nanostructures. © 2010 Elsevier B.V. All rights reserved.
Somaschini, C., Bietti, S., Fedorov, A., Koguchi, N., Sanguinetti, S. (2011). Outer zone morphology in GaAs ring/disk nanostructures by droplet epitaxy. JOURNAL OF CRYSTAL GROWTH, 323(1), 279-281 [10.1016/j.jcrysgro.2010.10.131].
Outer zone morphology in GaAs ring/disk nanostructures by droplet epitaxy
SOMASCHINI, CLAUDIO;BIETTI, SERGIO;SANGUINETTI, STEFANO
2011
Abstract
We present the molecular beam epitaxy (MBE) fabrication of GaAs ring/disk nanostructures. In this system, a central quantum ring is surrounded by a flat outer disk-like region, which is developed following a layer-by-layer growth mode. We studied the influence of the growth temperature on the morphology of these nanostructures and found out a pronounced dependence only for the outer region diameter, which is interpreted in terms of larger Ga atoms surface diffusion length at higher temperatures. Our experimental data provide a fundamental parameter to control the final shape of GaAs coupled ring/disk nanostructures. © 2010 Elsevier B.V. All rights reserved.
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