The fabrication, by pure self-assembly, of GaAs/AlGaAs dot-ring quantum nanostructures is presented. The growth is performed via droplet epitaxy, which allows for the fine control, through As flux and substrate temperature, of the crystallization kinetics of nanometer scale metallic Ga reservoirs deposited on the surface. Such a procedure permits the combination of quantum dots and quantum rings into a single, multi-functional, complex quantum nanostructure.
Somaschini, C., Bietti, S., Koguchi, N., Sanguinetti, S. (2011). Coupled quantum dot-ring structures by droplet epitaxy. NANOTECHNOLOGY, 22(18) [10.1088/0957-4484/22/18/185602].
Coupled quantum dot-ring structures by droplet epitaxy
SOMASCHINI, CLAUDIO;BIETTI, SERGIO;SANGUINETTI, STEFANO
2011
Abstract
The fabrication, by pure self-assembly, of GaAs/AlGaAs dot-ring quantum nanostructures is presented. The growth is performed via droplet epitaxy, which allows for the fine control, through As flux and substrate temperature, of the crystallization kinetics of nanometer scale metallic Ga reservoirs deposited on the surface. Such a procedure permits the combination of quantum dots and quantum rings into a single, multi-functional, complex quantum nanostructure.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
