The fabrication, by pure self-assembly, of GaAs/AlGaAs dot-ring quantum nanostructures is presented. The growth is performed via droplet epitaxy, which allows for the fine control, through As flux and substrate temperature, of the crystallization kinetics of nanometer scale metallic Ga reservoirs deposited on the surface. Such a procedure permits the combination of quantum dots and quantum rings into a single, multi-functional, complex quantum nanostructure.

Somaschini, C., Bietti, S., Koguchi, N., Sanguinetti, S. (2011). Coupled quantum dot-ring structures by droplet epitaxy. NANOTECHNOLOGY, 22(18) [10.1088/0957-4484/22/18/185602].

Coupled quantum dot-ring structures by droplet epitaxy

SOMASCHINI, CLAUDIO;BIETTI, SERGIO;SANGUINETTI, STEFANO
2011

Abstract

The fabrication, by pure self-assembly, of GaAs/AlGaAs dot-ring quantum nanostructures is presented. The growth is performed via droplet epitaxy, which allows for the fine control, through As flux and substrate temperature, of the crystallization kinetics of nanometer scale metallic Ga reservoirs deposited on the surface. Such a procedure permits the combination of quantum dots and quantum rings into a single, multi-functional, complex quantum nanostructure.
Articolo in rivista - Articolo scientifico
Quantum Rings; III-V Semiconductors; Epitaxy
English
2011
22
18
185602
none
Somaschini, C., Bietti, S., Koguchi, N., Sanguinetti, S. (2011). Coupled quantum dot-ring structures by droplet epitaxy. NANOTECHNOLOGY, 22(18) [10.1088/0957-4484/22/18/185602].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/23658
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