SiHx (x = 1,2,3) ions impact on Si(001)(1 x 1):H and Si(001)(2 x 1):H surfaces has been studied by classical molecular dynamic simulations, considering an energetic range for the impinging species from 5 to 15 eV. Despite the initial full H coverage a high sticking coefficient has been obtained for all the species under investigation. A considerable fraction of adsorption events causes H removal from the surface while for other simulations a soft landing mechanism of the ions has been observed. Few representative minima for SiH2/ Si(0 01)(2 x 1):H were re-converged by ab initio calculations in order to check the reliability of our results. (C) 2007 Elsevier B.V. All rights reserved.
Cereda, S., Montalenti, F., Miglio, L. (2007). Interaction od SiHx precursors with hydrogen-covered Si surfaces: impact dynamics and adsorption sites. SURFACE SCIENCE, 601(18), 3970-3973 [10.1016/j.susc.2007.04.086].
Interaction od SiHx precursors with hydrogen-covered Si surfaces: impact dynamics and adsorption sites
MONTALENTI, FRANCESCO CIMBRO MATTIA;MIGLIO, LEONIDA
2007
Abstract
SiHx (x = 1,2,3) ions impact on Si(001)(1 x 1):H and Si(001)(2 x 1):H surfaces has been studied by classical molecular dynamic simulations, considering an energetic range for the impinging species from 5 to 15 eV. Despite the initial full H coverage a high sticking coefficient has been obtained for all the species under investigation. A considerable fraction of adsorption events causes H removal from the surface while for other simulations a soft landing mechanism of the ions has been observed. Few representative minima for SiH2/ Si(0 01)(2 x 1):H were re-converged by ab initio calculations in order to check the reliability of our results. (C) 2007 Elsevier B.V. All rights reserved.
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