Ge/Si is popularly considered as the prototypical example of a system following the Stransky-Krastanow (SK) growth modality. Despite being truly simpler than other SK systems, Ge/Si displays remarkably fascinating physics, starting from the very onset of island formation, discussed in detail in this chapter with the help of a combined theoretical and experimental analysis. Complex phenomena following nucleation of 3D structures, such as Si/Ge intermixing and island ordering, are also described and interpreted with the use of simple theory. Some recent findings, likely to trigger further research in the coming years, are finally summarized in the concluding future trends section.
Miglio, L., Montalenti, F. (2011). Modelling the evolution of germanium islands on silicon(001) thin films. In Y. Shiraki, N. Usami (a cura di), Silicon-germanium (SiGe) nanostructures: Production, properties and applications in electronics (pp. 211-246). Woodhead.
Modelling the evolution of germanium islands on silicon(001) thin films
Miglio, L;Montalenti, FCM
2011
Abstract
Ge/Si is popularly considered as the prototypical example of a system following the Stransky-Krastanow (SK) growth modality. Despite being truly simpler than other SK systems, Ge/Si displays remarkably fascinating physics, starting from the very onset of island formation, discussed in detail in this chapter with the help of a combined theoretical and experimental analysis. Complex phenomena following nucleation of 3D structures, such as Si/Ge intermixing and island ordering, are also described and interpreted with the use of simple theory. Some recent findings, likely to trigger further research in the coming years, are finally summarized in the concluding future trends section.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.