The silicon germanium dots grown in the StranskiKrastanow mode are used to induce biaxial tensile strain in a silicon capping layer. A high Ge content and correspondingly high Si strain levels are reached due to the 3-D growth of the dots. The n-channel MOS devices, referred to in this letter as DotFETs, are processed with the main gate segment above the strained Si layer on a single dot. To prevent the intermixing of the Si/SiGe/Si structure, a novel low-temperature FET structure processed below 400 °C has been implemented: The ultrashallow source/drain junctions formed by excimer-laser annealing in the full-melt mode of ion-implanted dopants are self-aligned to a metal gate. The crystallinity of the structure is preserved throughout the processing, and compared to reference devices, an average increase in the drain current of up to 22.5% is obtained. © 2006 IEEE.
Jovanovi, V., Biasotto, C., Nanver, L.K., Moers, J., Grtzmacher, D., Gerharz, J., et al. (2010). n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility. IEEE ELECTRON DEVICE LETTERS, 31(10), 1083-1085 [10.1109/LED.2010.2058995].
Citazione: | Jovanovi, V., Biasotto, C., Nanver, L.K., Moers, J., Grtzmacher, D., Gerharz, J., et al. (2010). n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility. IEEE ELECTRON DEVICE LETTERS, 31(10), 1083-1085 [10.1109/LED.2010.2058995]. | |
Tipo: | Articolo in rivista - Articolo scientifico | |
Carattere della pubblicazione: | Scientifica | |
Presenza di un coautore afferente ad Istituzioni straniere: | Si | |
Titolo: | n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility | |
Autori: | Jovanovi, V; Biasotto, C; Nanver, LK; Moers, J; Grtzmacher, D; Gerharz, J; Mussler, G; van der Cingel, J; Zhang, JJ; Bauer, G; Schmidt, OG; Miglio, L | |
Autori: | ||
Data di pubblicazione: | 2010 | |
Lingua: | English | |
Rivista: | IEEE ELECTRON DEVICE LETTERS | |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/LED.2010.2058995 | |
Appare nelle tipologie: | 01 - Articolo su rivista |