The silicon germanium dots grown in the StranskiKrastanow mode are used to induce biaxial tensile strain in a silicon capping layer. A high Ge content and correspondingly high Si strain levels are reached due to the 3-D growth of the dots. The n-channel MOS devices, referred to in this letter as DotFETs, are processed with the main gate segment above the strained Si layer on a single dot. To prevent the intermixing of the Si/SiGe/Si structure, a novel low-temperature FET structure processed below 400 °C has been implemented: The ultrashallow source/drain junctions formed by excimer-laser annealing in the full-melt mode of ion-implanted dopants are self-aligned to a metal gate. The crystallinity of the structure is preserved throughout the processing, and compared to reference devices, an average increase in the drain current of up to 22.5% is obtained. © 2006 IEEE.
Jovanovi, V., Biasotto, C., Nanver, L., Moers, J., Grtzmacher, D., Gerharz, J., et al. (2010). n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility. IEEE ELECTRON DEVICE LETTERS, 31(10), 1083-1085 [10.1109/LED.2010.2058995].
n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility
MIGLIO, LEONIDA
2010
Abstract
The silicon germanium dots grown in the StranskiKrastanow mode are used to induce biaxial tensile strain in a silicon capping layer. A high Ge content and correspondingly high Si strain levels are reached due to the 3-D growth of the dots. The n-channel MOS devices, referred to in this letter as DotFETs, are processed with the main gate segment above the strained Si layer on a single dot. To prevent the intermixing of the Si/SiGe/Si structure, a novel low-temperature FET structure processed below 400 °C has been implemented: The ultrashallow source/drain junctions formed by excimer-laser annealing in the full-melt mode of ion-implanted dopants are self-aligned to a metal gate. The crystallinity of the structure is preserved throughout the processing, and compared to reference devices, an average increase in the drain current of up to 22.5% is obtained. © 2006 IEEE.
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