The preparation of an array of nanocavities (NCs) in silicon via thermal treatments of high-fluence helium-implanted silicon is a well-established process. The NCs have offered a powerful tool for the preparation of well-defined and ordered internal silicon surface, enabling the experimental investigation of its free energy. Here, instead, we interpret the NCs as an ideal nanolaboratory for the study of the adsorption and desorption of H 2 on silicon. We will present the determination of the internal pressure through the equilibrium abundances of monohydride dimers and dihydrides obtained with infrared spectroscopy. Copyright © 2010 John Wiley & Sons, Ltd.

Romano, E., Cerofolini, G., Narducci, D., Corni, F., Frabboni, S., Ottaviani, G., et al. (2010). A tool for the spectroscopic investigation of hydrogen–silicon interaction. SURFACE AND INTERFACE ANALYSIS, 42(6-7), 1307-1310 [10.1002/sia.3242].

A tool for the spectroscopic investigation of hydrogen–silicon interaction

NARDUCCI, DARIO;
2010

Abstract

The preparation of an array of nanocavities (NCs) in silicon via thermal treatments of high-fluence helium-implanted silicon is a well-established process. The NCs have offered a powerful tool for the preparation of well-defined and ordered internal silicon surface, enabling the experimental investigation of its free energy. Here, instead, we interpret the NCs as an ideal nanolaboratory for the study of the adsorption and desorption of H 2 on silicon. We will present the determination of the internal pressure through the equilibrium abundances of monohydride dimers and dihydrides obtained with infrared spectroscopy. Copyright © 2010 John Wiley & Sons, Ltd.
Articolo in rivista - Articolo scientifico
MIT infrared spectroscopy, Nanocavities in silicon, Hydrogen injection via wet chemistry, Hydrogen adsorption, desorption on silicon
English
2010
42
6-7
1307
1310
none
Romano, E., Cerofolini, G., Narducci, D., Corni, F., Frabboni, S., Ottaviani, G., et al. (2010). A tool for the spectroscopic investigation of hydrogen–silicon interaction. SURFACE AND INTERFACE ANALYSIS, 42(6-7), 1307-1310 [10.1002/sia.3242].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/21767
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