It is widely known that the impurities and defects identification by Photoluminescence (PL) and Infrared (IR) spectroscopies have given a strong contribution to the outstanding development of both microelectronic and photovoltaic silicon based devices in the last 60 years. This paper briefly reviews the main historical achievements and recent developments obtained in this field by PL and IR, paying particular attention to the most useful data for the study of defects in silicon for photovoltaics
Binetti, S. (2018). Photoluminescence and infrared spectroscopy for impurities identification in silicon for photovoltaic applications. In Proceeding of the 8th Forum on the Science and Technology of Silicon Materials 2018 (Okayama) Nov. 18-21, 2018, Okayama, Japan.
Photoluminescence and infrared spectroscopy for impurities identification in silicon for photovoltaic applications
Binetti, SO
2018
Abstract
It is widely known that the impurities and defects identification by Photoluminescence (PL) and Infrared (IR) spectroscopies have given a strong contribution to the outstanding development of both microelectronic and photovoltaic silicon based devices in the last 60 years. This paper briefly reviews the main historical achievements and recent developments obtained in this field by PL and IR, paying particular attention to the most useful data for the study of defects in silicon for photovoltaics
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