A fine structure on the higher energy side of donor–acceptor (DA) pair luminescence at 4.2K has been analyzed in compensated Si involving P donors and B acceptors. We calculated the density distribution of DA pairs against photon energy from the number of pairs as a function of the transition energy of respective pairs. A close agreement was obtained between the density curve and the observed spectral structure using the generally accepted values of energy gap and P donor and B acceptor ionization energies. This allows us to conclude that the structure is due to discrete DA pair recombination
Tajima, M., Iwai, T., Toyota, H., Binetti, S., Macdonald, D. (2010). Fine Structure Due to Donor–Acceptor Pair Luminescence in Compensated Si. APPLIED PHYSICS EXPRESS, 3(7), 071301 [10.1143/APEX.3.071301].
Fine Structure Due to Donor–Acceptor Pair Luminescence in Compensated Si
BINETTI, SIMONA OLGA;
2010
Abstract
A fine structure on the higher energy side of donor–acceptor (DA) pair luminescence at 4.2K has been analyzed in compensated Si involving P donors and B acceptors. We calculated the density distribution of DA pairs against photon energy from the number of pairs as a function of the transition energy of respective pairs. A close agreement was obtained between the density curve and the observed spectral structure using the generally accepted values of energy gap and P donor and B acceptor ionization energies. This allows us to conclude that the structure is due to discrete DA pair recombination
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