Thin photovoltaics based on chalcopyrite film, Cu(In,Ga)Se2 (CIGS) and related alloys, have exhibited so far efficiency over 22,3% on the laboratory scale. However, the CIGS solar cells scale-up is expected to be hampered because of the low availability of In and Ga in the Earth crust. The most promising next leader in the chalcogenide thin film technology seems to be the kesterite compound Cu2ZnSnS4 (CZTS), as it is based on earth-abundant elements and it shows the better results when low-cost solution processable techniques are employed in the fabrication. Solution-processed inorganic semiconductors, in fact, offer a rising route for the low-cost mass production of solar cells In this context, we present a new chemical procedure to obtain a superior quality Cu2ZnSnS4 and Cu2FeSnS4 thin films composed of highly soluble and inexpensive precursors in a non-toxic and environmentally friendly solvent. The films were prepared by a Sol-Gel method and the deposition was carried out by in situ gel formation on fluorine doped tin oxide coated glass. The films obtained were characterized by Raman spectroscopy, X-ray diffraction, energy dispersive X-ray analysis, photoluminescence spectroscopy and by electronic scanning microscopy. The developed methodology has successfully identified an innovative way to achieve high-quality kesterite thin films for photovoltaic applications; relate devices optimization is currently underway.

Trifiletti, V., Mostoni, S., Scotti, R., Binetti, S. (2018). In situ gel formation of high quality earth abundant chalcogenide thin film for PV application. Intervento presentato a: E-MRS Spring Meeting and Exhibit, Strasbourg (France).

In situ gel formation of high quality earth abundant chalcogenide thin film for PV application

Vanira Trifiletti;Silvia Mostoni;Roberto Scotti;Simona Binetti
2018

Abstract

Thin photovoltaics based on chalcopyrite film, Cu(In,Ga)Se2 (CIGS) and related alloys, have exhibited so far efficiency over 22,3% on the laboratory scale. However, the CIGS solar cells scale-up is expected to be hampered because of the low availability of In and Ga in the Earth crust. The most promising next leader in the chalcogenide thin film technology seems to be the kesterite compound Cu2ZnSnS4 (CZTS), as it is based on earth-abundant elements and it shows the better results when low-cost solution processable techniques are employed in the fabrication. Solution-processed inorganic semiconductors, in fact, offer a rising route for the low-cost mass production of solar cells In this context, we present a new chemical procedure to obtain a superior quality Cu2ZnSnS4 and Cu2FeSnS4 thin films composed of highly soluble and inexpensive precursors in a non-toxic and environmentally friendly solvent. The films were prepared by a Sol-Gel method and the deposition was carried out by in situ gel formation on fluorine doped tin oxide coated glass. The films obtained were characterized by Raman spectroscopy, X-ray diffraction, energy dispersive X-ray analysis, photoluminescence spectroscopy and by electronic scanning microscopy. The developed methodology has successfully identified an innovative way to achieve high-quality kesterite thin films for photovoltaic applications; relate devices optimization is currently underway.
slide
kesterite
solution-processed inorganic semiconductors
solar cells
Sol-Gel method
English
E-MRS Spring Meeting and Exhibit
2018
2018
https://www.european-mrs.com/substitution-and-recycling-critical-raw-materials-optoelectronic-magnetic-and-energy-devices-ii-em-0
none
Trifiletti, V., Mostoni, S., Scotti, R., Binetti, S. (2018). In situ gel formation of high quality earth abundant chalcogenide thin film for PV application. Intervento presentato a: E-MRS Spring Meeting and Exhibit, Strasbourg (France).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/202391
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