A pair of completely integrated capless preamplifiers (not requiring external capacitance) for MEMS microphones are presented. The devices exploit specific circuit solutions to implement a proper dc biasing of the pre-amplifier and a low frequency (< 1 Hz) high-pass pole. The two solutions adopted are a based on a transistor in the off state (OTP) and a switched-resistor (SRP), respectively. Since the devices are supposed to operate with different silicon microphones, the pre-amplifier gain has to be programmable. In spite of the single ended configuration and independently of the gain, both pre-amplifiers achieve a signal to noise ratio (SNR) lower than -100 dB. The total harmonic distortion (THD) is lower than -80 dB for the OTP and lower than -100 dB for the SRP. The devices are implemented in a 0.18-μm CMOS technology, with a supply voltage of 1.8-V. In both cases the power consumption is 230 μW. The bandwidth of interest ranges from 20 Hz to 20 kHz. Both solutions have variable gain configurations [-6, 0, 6, 12, 18] dB.

Croce, M., De Berti, C., Crespi, L., Malcovati, P., Baschirotto, A. (2017). MEMS microphone fully-integrated CMOS cap-less preamplifiers. In PRIME 2017 - 13th Conference on PhD Research in Microelectronics and Electronics, Proceedings (pp.37-40). Institute of Electrical and Electronics Engineers Inc. [10.1109/PRIME.2017.7974101].

MEMS microphone fully-integrated CMOS cap-less preamplifiers

Baschirotto, A.
2017

Abstract

A pair of completely integrated capless preamplifiers (not requiring external capacitance) for MEMS microphones are presented. The devices exploit specific circuit solutions to implement a proper dc biasing of the pre-amplifier and a low frequency (< 1 Hz) high-pass pole. The two solutions adopted are a based on a transistor in the off state (OTP) and a switched-resistor (SRP), respectively. Since the devices are supposed to operate with different silicon microphones, the pre-amplifier gain has to be programmable. In spite of the single ended configuration and independently of the gain, both pre-amplifiers achieve a signal to noise ratio (SNR) lower than -100 dB. The total harmonic distortion (THD) is lower than -80 dB for the OTP and lower than -100 dB for the SRP. The devices are implemented in a 0.18-μm CMOS technology, with a supply voltage of 1.8-V. In both cases the power consumption is 230 μW. The bandwidth of interest ranges from 20 Hz to 20 kHz. Both solutions have variable gain configurations [-6, 0, 6, 12, 18] dB.
paper
Electrical and Electronic Engineering; Instrumentation
English
13th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2017
2017
Croce, M.
PRIME 2017 - 13th Conference on PhD Research in Microelectronics and Electronics, Proceedings
9781509065073
2017
37
40
7974101
none
Croce, M., De Berti, C., Crespi, L., Malcovati, P., Baschirotto, A. (2017). MEMS microphone fully-integrated CMOS cap-less preamplifiers. In PRIME 2017 - 13th Conference on PhD Research in Microelectronics and Electronics, Proceedings (pp.37-40). Institute of Electrical and Electronics Engineers Inc. [10.1109/PRIME.2017.7974101].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/191746
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