This paper uses the simplified charge-based EKV MOSFET model for studying the effects of total ionizing dose (TID) on analog parameters and figures-of-merit (FoMs) of 28nm bulk MOSFETs. These effects are demonstrated to be fully captured by the five key parameters of the simplified EKV model. The latter are extracted from the measured transfer characteristics at each TID. Despite the very few parameters, both the simplified large- A nd small-signal models present an excellent match with measurements at all levels of TID. The impacts of TID on essential parameters, including the drain leakage current, the threshold voltage, the slope factor, and the specific current, are then evaluated. Finally, TID effects on the transconductance Gm, the output conductance Gds, the intrinsic gain Gm/Gdsand the transconductance efficiency Gm/Id are investigated.
Zhang, C., Jazaeri, F., Pezzotta, A., Bruschini, C., Borghello, G., Mattiazzo, S., et al. (2017). Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs. In European Solid-State Device Research Conference12 October 2017, 47th European Solid-State Device Research Conference, ESSDERC 2017; Leuven; Belgium; 11-14 September 2017 (pp.30-33). Editions Frontieres [10.1109/ESSDERC.2017.8066584].
Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs
Baschirotto, A.;
2017
Abstract
This paper uses the simplified charge-based EKV MOSFET model for studying the effects of total ionizing dose (TID) on analog parameters and figures-of-merit (FoMs) of 28nm bulk MOSFETs. These effects are demonstrated to be fully captured by the five key parameters of the simplified EKV model. The latter are extracted from the measured transfer characteristics at each TID. Despite the very few parameters, both the simplified large- A nd small-signal models present an excellent match with measurements at all levels of TID. The impacts of TID on essential parameters, including the drain leakage current, the threshold voltage, the slope factor, and the specific current, are then evaluated. Finally, TID effects on the transconductance Gm, the output conductance Gds, the intrinsic gain Gm/Gdsand the transconductance efficiency Gm/Id are investigated.
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